The positive supply V CC is used to reverse-bias the collector junction.
2.
Some photodetector devices, such as PIN photodiodes and phototransistors ( in which the base-collector junction is a PIN diode ), use a PIN junction in their construction.
3.
The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction.
4.
When emitted light struck the surface of the transistor, it was absorbed in the regions of both the emitter-base and base-collector junctions causing the transistor to conduct.
5.
Note that the base-collector junction of the multiple-emitter transistor and the base-emitter junction of the output transistor are in series between the bottom of the resistor and ground.
6.
Schottky diodes made from palladium silicide ( PdSi ) are excellent due to their lower forward voltage ( which has to be lower than the forward voltage of the base-collector junction ).
7.
This construction produces two p n junctions : a base emitter junction and a base collector junction, separated by a thin region of semiconductor known as the base region ( two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor ).
8.
The output transistor is not allowed to saturate ( i . e . its base collector junction must remain reverse-biased ) because the first transistor, when saturated, establishes full ( 100 % ) parallel negative feedback between the collector and the base of the second transistor.
9.
Because the base is narrow, most of these electrons will diffuse into the reverse-biased ( electrons and holes are formed at, and move away from the junction ) base collector junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current.
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